Intel 1101


  A 256-bit SRAM (Static Random Access Memory).  It was Intel's first SRAM with MOS (Metal Oxide Semiconductor) technology.

    The 1101 was developed in parallel with the 3101, but lost the race to be Intel’s first product. This was the world's first high-volume MOS semiconductor memory, and the first use of MOS silicon gate technology. It gave Intel the edge it needed to produce high density memories. Although the 1101 was too complex and too small to achieve broad market acceptance, its basic MOS process was applied to shift registers (a simple form of serial memory).

The first 1101 devices were manufactured in a former Union Carbide factory in Mountain View; later (in the end of 1971) the production moved to Santa Clara.

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